MJD41C Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min

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MJD41C MJD41C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Applica

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Features  BVCEO > 100V  IC = 6A Continuous Collector Current  ICM = 10A Peak Pulse Current  Ideal for Power Switching or Amplification Application

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SMD Type Transistors Complementary Power Transistors MJD41C(NPN) MJD42C(PNP) Features Lead Formed for Surface Mount Applications in Plastic Sleeves

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MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed s

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD41C/D Complementary Power Transistors • • • • • MJD41C* PNP MJD42C* *Motorola Pref

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Epitaxial Planar NPN Transistor FEATURES  Low formed for surface mount application. Pb Lead-free  Electrically similar to popular and TIP41C. 

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