isc Silicon NPN Power Transistors DESCRIPTION ·D.
DIODES
MJD41C - 100V NPN MEDIUM POWER TRANSISTOR
Features BVCEO > 100V IC = 6A Continuous Collector Current ICM = 10A Peak Pulse Current Ideal for Power Switching or Amplification Application.
Inchange Semiconductor
MJD41C - Silicon NPN Power Transistor
isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min.
Kexin
MJD41C - Complementary Power Transistors
SMD Type Transistors Complementary Power Transistors MJD41C(NPN) MJD42C(PNP) Features Lead Formed for Surface Mount Applications in Plastic Sleeves.
Motorola
MJD41C - SILICON POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD41C/D Complementary Power Transistors • • • • • MJD41C* PNP MJD42C* *Motorola Pref.
ON
MJD41C - Complementary Power Transistors
MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed s.
Fairchild
MJD41C - General Purpose Amplifier
MJD41C MJD41C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Applica.
GME
MJD41C - Epitaxial Planar NPN Transistor
Epitaxial Planar NPN Transistor FEATURES Low formed for surface mount application. Pb Lead-free Electrically similar to popular and TIP41C. .
