MJD42_MJD42C Datasheet | Specifications & PDF Download

MJD42C Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP 。Silicon PNP transistor in a TO-252 Plastic Package.  / Features MJD41C 。 Comple

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isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(M

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Elektronische Bauelemente MJD42C -6A, -100V P P Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fre

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SMD Type Transistors Complementary Power Transistors MJD41C(NPN) MJD42C(PNP) Features Lead Formed for Surface Mount Applications in Plastic Sleeves

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Epitaxial Planar PNP Transistor FEATURES z Low formed for surface mount Pb application. Lead-free z Electrically similar to popular and TIP42C.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors MJD42C TRANSISTOR (PNP) FEATURES z Designed for

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MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed s

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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Green MJD42C 100V PNP MEDIUM POWER TRANSISTOR IN TO252 Features  BVCEO > -100V  IC = -6A Continuous Collector Current  ICM = -10A Peak Pulse Cur

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MJD42C MJD42C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-P

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MJD42C MJD42C General Purpose Amplifier Low Speed Switching Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I.P

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isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.5 V(Max)@ IC = -6A

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD41C/D Complementary Power Transistors • • • • • MJD41C* PNP MJD42C* *Motorola Pref

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