MJD50 Datasheet | Specifications & PDF Download

® MJD50 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY SURFACE-MOUNTING

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD47/D High Voltage Power Transistors DPAK For Surface Mount Applications • • • • • •

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isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R MJD50TF MAIN CHARACTERISTICS IC 1.0A VCEO 400V PC(DPAK) 15W Package  APPLICATIO

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MJD47 / MJD50 — NPN Epitaxial Silicon Transistor March 2014 MJD47 / MJD50 NPN Epitaxial Silicon Transistor Features • High-Voltage and High-Reliabi

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MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G High Voltage Power Transistors DPAK for Surface Mount Applications Designed for line operated audio output a

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SMD Type Transistors NPN Epitaxial Silicon Transistor MJD47;MJD50 Features Load Formed for Surface Mount Application Straight Lead + 0.29 .7 0 -0.2

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MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G High Voltage Power Transistors DPAK for Surface Mount Applications Designed for line operated audio output a

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R MJD50TF MAIN CHARACTERISTICS IC 1.0A VCEO 400V PC(DPAK) 15W Package  APPLICATIO

Rating: 1 ★ (1 votes)