MJE18004 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor MJE18004G DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·G:Pb-Free Pa

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18004/D ™ Data Sheet SWITCHMODE™ Designer's NPN Bipolar Power Transistor For Switc

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MJE18004, MJF18004 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific s

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18004D2/D MJE18004D2 Designer's ™ Data Sheet High Speed, High Gain Bipolar NPN Po

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot vari

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package www.datasheet4u.com ·High voltage ,high

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