MJE200 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE200/D Complementary Silicon Power Plastic Transistors . . . designed for low voltag

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Complementary Silicon Power Plastic Transistors MJE200G (NPN), MJE210G (PNP) These devices are designed for low voltage, low−power, high−gain audio a

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MJE200 NPN MJE210 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min) ·DC Current Gain- : hFE = 70(Min) @ IC= 50

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MJE200 MJE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) • Complement to M

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MJE200 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.  / Features -，， MJE210 。 L

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MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, h

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