MJE210 Datasheet | Specifications & PDF Download

Complementary Silicon Power Plastic Transistors MJE200G (NPN), MJE210G (PNP) These devices are designed for low voltage, low−power, high−gain audio a

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MJE210 MJE210 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) • Complement to M

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE200/D Complementary Silicon Power Plastic Transistors . . . designed for low voltag

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MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, h

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® MJE210 SILICON PNP TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s PNP TRANSISTOR DESCRIPTION )The MJE210 is a silicon Epitaxial-Base PNP t

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MJE200 NPN MJE210 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE

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MJE210 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F PNP 。Silicon PNP transistor in a TO-126F Plastic Package.  / Features -，， MJE200  Lo

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