MMBF170 Datasheet | Specifications & PDF Download

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF170LT1/D TMOS FET Transistor N–Channel ® 1 GATE DRAIN 3 MMBF170LT1 2 SOURCE 3

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Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Fre

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MMBF170L, NVBF170L MOSFET – N-Channel, SOT-23 500 mA, 60 V Features • NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Co

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Field Effect Transistor N-Channel, Enhancement Mode BS170, MMBF170 General Description These N−Channel enhancement mode field effect transistors are p

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MMBF170 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(on) Max 5.0Ω @ VGS = 10V 5.3Ω @ VGS = 4.5V ID Max TA = +25°C 200mA 190mA

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BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor G

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