MN638S Datasheet | Specifications & PDF Download

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Reliability ·Minimum Lot-to-Lot

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Power Transistor MN638S Absolute Maximum Ratings (Ta=25ºC) Symbol Ratings Unit VCBO 380±50 V VCEO 380±50 V VEBO 6V IC 6 (pulse 10) A I

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