MOSFETS. Datasheet | Specifications & PDF Download

QM3006M3 General Description The QM3006M3 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS

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QM3004SM3 General Description The QM3004SM3 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VDSS = 100 V ID25 = 80

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IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40 N-Channel Power MOSFETs 10A, 350V/400V Description These devices are n-channel, enhancement mode, power MO

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SSM4532M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 N-ch D2 D1 D1 G2 S2 BV ID DSS +30V 50mΩ +5A -30

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QM4015S P-Ch 40V Fast Switching MOSFETs General Description The QM4015S is the highest performance trench P-ch MOSFETs with extreme high cell density

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CMP3803/CMB3803/CMI3803 General Description The 3803 is N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge fo

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QM04N60F 1 2011-11-15 - 1 - N-Ch 600V Fast Switching MOSFETs General Description The QM04N60F is the highest performance N-ch MOSFETs with extre

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QM3036D General Description N-Ch 25V Fast Switching MOSFETs Product Summery The QM3036D is the highest performance trench N-ch MOSFETs with extreme

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60V N-Channel MOSFETs PDL6912 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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SM-8 DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS ISSUE 1 - NOVEMBER 1995 ZDM4306N D1 D1 D2 D2 PARTMARKING DETAIL – M4306N G1 S1 G2 S2 SM-8 (8 LEAD SOT2

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APT50M80B2VR APT50M80LVR 500V 58A 0.080W B2VR POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs

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D TO-247 G S APT6035BN 600V 19.0A 0.35Ω POWER MOS IV ® N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID IDM

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D TO-247 G S APT6040BN 600V ® 18.0A 0.40Ω 17.0A 0.45Ω POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Vol

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FRS9130D, FRS9130R, FRS9130H June 1998 6A, -100V, 0.565 Ohm, Rad Hard, P-Channel Power MOSFETs Package TO-257AA Features • 6A, -100V, RDS(on) = 0.56

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CMP100N03/CMB100N03/CMI100N03 N-Ch 30V Fast Switching MOSFETs General Description The100N03 is N-ch MOSFETs with extreme high cell density , which pr

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D TO-254 G S POWER MOS IV MAXIMUM RATINGS Symbol VDSS VGS ID IDM IAR Parameter Drain-Source Voltage Gate-Source Voltage TM 2N7227 400 Volt JX2N722

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