.
Potens semiconductor
PDH3902 - N-Channel MOSFETs
30V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adva.
Cmos
CMU06N02N - N-Ch 20V Fast Switching MOSFETs
CMD06N02N /CMU06N02N N-Ch 20V Fast Switching MOSFETs General Description Product Summery The 06N02 is N-channel MOSFET device that features a low .
Cmos
CMU1653 - N-Ch 30V Fast Switching MOSFETs
CMD1653/CMU1653 N-Ch 30V Fast Switching MOSFETs General Description Product Summery These is N-channel MOSFET device that features a low on-state .
Potens semiconductor
PDD0958A - N-Channel MOSFETs
100V N-Channel MOSFETs PDD0958A General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
Seme LAB
SML20S56 - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML20S56 D3PAK Package Outline. Dimensions in mm (inches) 4.98 (0.196) 5.08 (0.200) 1.47 (0.058) 1.57 (0.062) 15.95 (0.628) 16.05 (0.632) 13.41 (0.52.
Samsung Electronics
IRFP9540 - (IRF9140 - IRF9143) P-Channel Power MOSFETs
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.
ST Microelectronics
STS10DN3LH5 - Power MOSFETs
www.DataSheet4U.com STS10DN3LH5 Dual N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET™ V Power MOSFET Features Type STS10DN3LH5 ■ ■ ■ ■ ■ VDSS 30 V RDS.
ST Microelectronics
STP13NK50Z - Power MOSFETs
STF13NK50Z STP13NK50Z, STW13NK50Z N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET Features Type STF1.
UBIQ
QM3004M6 - N-Ch 30V Fast Switching MOSFETs
General Description The QM3004M6 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gat.
Texas Instruments
TPS1100 - SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS
TPS1100, TPS1100Y SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS D Low rDS(on) . . . 0.18 Ω Typ at VGS = – 10 V D 3 V Compatible D Requires No External VC.
Texas Instruments
TPS1110 - SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS
TPS1110, TPS1110Y SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS D Low rDS(on) . . . 65 mΩ Typ at VGS = – 4.5 V D High Current Capability 6 A at VGS = – 4.5 V .
SeCoS
S2N7002T-C - N-Channel Plastic-Encapsulate MOSFETS
Elektronische Bauelemente S2N7002T-C 115mA, 60V, RDS(ON) 7.5Ω N-Channel Plastic-Encapsulate MOSFETS FEATURES Low On-Resistance Low Gate Threshol.
ART CHIP
IRFZ40 - N-CHANNEL POWER MOSFETS
IRFZ44/45/40/42 N-CHANNEL POWER MOSFETS FEATURES Lower RDS(ON) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell struct.
NJS
IRF423 - N-Channel Power MOSFETs
^E.mL-don.du.cio'i Lpioducti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE; (973) 376-2922 (212) 227-6005 IRF420, IRF421, FAX:.
Intersil Corporation
FSS913A0D - 10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs
FSS913A0D, FSS913A0R Data Sheet June 1999 File Number 4451.3 10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The D.
Cmos
CMU04N03 - N-Ch 30V Fast Switching MOSFETs
CMD04N03 / CMU04N03 N-Ch 30V Fast Switching MOSFETs General Description The 04N03 is the highest performance trench N-ch MOSFETs with extreme high c.
Potens semiconductor
PMF04N100T - N-Channel MOSFETs
1000V N-Channel MOSFETs PMF04N100T General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS techn.
Vishay Siliconix
VN2010L - N-Channel 200-V (D-S) MOSFETs
www.DataSheet4U.com VN2010L/BS107 Vishay Siliconix N-Channel 200-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VN2010L BS107 200 V(BR)DSS Min (V) r.
Seme LAB
SML20B67 - N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML20B67 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26.
