MTK Datasheet | Specifications & PDF Download

Description JMTK10N10A JMT N-channel Enhancement Mode Power MOSFET Features  100V, 10A RDS(ON) <110mΩ @ VGS = 10V RDS(ON) <140mΩ @ VGS = 4.5V  Ad

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IP2716 USB TYPE-C PD3.0、QC3.0/2.0/MTK High Voltage Charger Protocol Controller Feature  USB TYPE-C  Integrate TYPE-C DRP protocol  Auto detect TYP

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Description JMTK2006A JMT N-channel Enhancement Mode Power MOSFET Features  20V, 60A RDS(ON) < 6.5mΩ @ VGS = 4.5V RDS(ON) < 10mΩ @ VGS = 2.5V  Ad

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MTK Bluetooth I C MT6601 Schematic & Layout Design Guideline WCP_SA Kevin Shih Dec.2006 Version 0.2 Free Datasheet http://www.datasheet4u.com/ Mt66

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Description JMTK100N02A JMT N-channel Enhancement Mode Power MOSFET Features  20V, 30A RDS(ON)< 11.2mΩ @ VGS =4.5V RDS(ON)< 17.5mΩ @ VGS =2.5V  A

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Description JMTK90N02A JMT N-channel MOSFET Features  20V, 90A RDS(ON) < 4.0mΩ @ VGS = 4.5V RDS(ON) < 6.0mΩ @ VGS = 2.5V  Lead free and Green Devi

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MTC800 MTA800 MTK800 MTX800 MT800 Thyristor Modules Features：  Isolated mounting base 2500V~  Pressure contact technology with Incrtased power cycl

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JMTK170N10A Description JMT N-channel Enhancement Mode Power MOSFET Features  100V,59A RDS(ON)<20mΩ @ VGS =10V  Advanced Trench Technology  Exce

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MTKH Series –SMD TCXO ¾ ¾ ¾ ¾ Industry Standard Package Wide Frequency Range HCMOS, LVDS, or LVPECL Output RoHS Compliant Available ELECTRICAL SPECIF

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FO R M ch ED un IA pin T g.m EK iao CO @ NF nb ID bs E w. NT co IA m L US EO N MT6589 HSPA+ Smartphone Application Processor Technical Brief Version:

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MTC90 MTA90 MTK90 MTX90 MT90 Thyristor Modules Features： n n n n n n Isolated mounting base 2500V~ Pressure contact technology with Increased power cy

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TECHSEM Features： n Isolated mounting base 2500V~ n Pressure contact technology with Increased power cycling capability n Space and weight savings Ty

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