MTW8N60E Datasheet | Specifications & PDF Download

MTW8N60E TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this.

MTW8N60E - TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTW8N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor TO-247 with Isolate

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ON Semiconductor

MTW8N60E - TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM

MTW8N60E Preferred Device Power MOSFET 8 Amps, 600 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enh

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Motorola Semiconductor Products

8 AMPS, 600 VOLTS N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE

ComSIT USA

MTW8N60E

30 In Stock

Unit Price : $0

onsemi

Chip-Germany GmbH

MTW8N60E

123 In Stock

Unit Price : $0

MTW8N60E Distributor

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