MTY14N100E Datasheet | Specifications & PDF Download

MTY14N100E TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this.

MTY14N100E - Power Field Effect Transistor

MTY14N100E TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand hi

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Motorola

MTY14N100E - TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTY14N100E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTY14

Rating: 1 ★ (1 votes)

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