Maple Semiconductor Datasheet | Specifications & PDF Download

SLP4N60C / SLF4N60C SLP4N60C/SLF4N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stri

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MSP120N08G MSP120N08G 80V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced technology. which provides h

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MSP10065V1 MSP10065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-F

(31 views)

MSP10120V1 MSP10120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High

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MSF10065V1 MSF10065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Fr

(31 views)

MSP05120V1 MSP05120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High

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MSP02120V1 MSP02120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High

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MSD06065V1 MSD06065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-F

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SLP5N65C / SLF5N65C SLP5N65C / SLF5N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar st

(26 views)

MSD05120V1 MSD05120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High

(25 views)

SLP40N26C / SLF40N26C SLP40N26C / SLF40N26C 260V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced plana

(25 views)

MSF10120V1 MSF10120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High

(24 views)

MSF06065V1 MSF06065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-Fr

(24 views)

MSP16065V1 MSP16065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-F

(22 views)

MSD02120V1 MSD02120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High

(22 views)

MSB120N08G / MSI120N08G MSB120N08G/MSI120N08G 80V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced tech

(22 views)

MSP08065V1 MSP08065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-F

(21 views)

MSH20120V1 MSH20120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High

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MS2H20120V1 MS2H20120V1 1200V Silicon Carbide Diode Features -1200-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -Hi

(19 views)

MSP06065V1 MSP06065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-F

(19 views)