Mosfets Datasheet | Specifications & PDF Download

www.DataSheet4U.com IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode s

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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30V N-Channel MOSFETs PDC3964X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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CMP3803/CMB3803/CMI3803 General Description The 3803 is N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge fo

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www.DataSheet4U.com DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs General feature ■ ■ ■ ■ ■ ■ ■ ■ Excell

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CMP100N04/CMB100N04/CMI100N04 N-Ch 40V Fast Switching MOSFETs General Description The100N04 is N-ch MOSFETs with extreme high cell density , which pr

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VDSS = 100 V ID25 = 80

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650V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technolog

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QM3002U N-Ch 30V Fast Switching MOSFETs General Description The QM3002U is the highest performance trench N-ch MOSFETs with extreme high cell density

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2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V (D-S) Single and Quad MOSFETs PRODUCT SUMMARY Part Number 2N6660 VQ1004J/P V(BR)DSS Min (V) 60 r

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VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VN0808L VN0808LS VQ1006P 80 90 V(BR)DSS Min (V

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Advance Technical Information www.DataSheet4U.com HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Lo

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Advance Technical Information www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 120N25 IXFK 120N25 VDSS ID25 RDS(on) = 250 V = 1

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Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic

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60V N-Channel MOSFETs PDC6904X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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HiPerFETTM Power MOSFETs Q-Class Not for New Designs IXFH40N30Q IXFT40N30Q VDSS = 300V ID25 = 40A ≤RDS(on) 85mΩ N-Channel Enhancement Mode Avalanch

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QM3002G N-Ch 30V Fast Switching MOSFETs General Description Product Summery The QM3002G is the highest performance trench N-ch MOSFETs with extreme

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60V N-Channel MOSFETs PDF6904 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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100V N-Channel MOSFETs PDF0904 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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