NF-BF-6 Datasheet | Specifications & PDF Download

CYT4BF TRAVEO™ T2G 32-bit Automotive MCU Based on Arm® Cortex®-M7 dual General description CYT4BF is a family of TRAVEO™ T2G microcontrollers targeted

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BFS17P NPN Silicon RF Transistor Features • Maximum collector-emitter voltage VCE0 = 15 V • Maximum collector current IC = 25 mA • Noise figure NF = 3

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www.DataSheet4U.com DATASHEET 28-BIT CONFIGURABLE REGISTERED BUFFER FOR DDR2 IDT74SSTUBF32868A occurred on the open-drain QERR pin (active low). Th

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CYT4BF TRAVEO™ T2G 32-bit Automotive MCU Based on Arm® Cortex®-M7 dual General description CYT4BF is a family of TRAVEO™ T2G microcontrollers targeted

Rating: 1 ★ (7 votes)

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network •

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BF1009S Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing

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IRFP4768PbF VDSS RDS(on) typ. max ID 250V 14.5m 17.5m 93A Application ⚫ High Efficiency Synchronous Rectification in SMPS ⚫ Uninterruptible Power

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2EDL05 family 2EDL05x06xx family 600 V Half Bridge Gate Driver with Integrated Bootstrap Diode (BSD) Features • Infineon thin-film-SOI-technology •

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Features  Advanced Process Technology  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Ease of Paralle

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PNP Silicon RF Transistor
For low distortion broadband amplifier in antenna and telecommunications systems up to 1.5 GHz at collector currents from

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GaAs INFRARED EMITTING DIODE LED55BF PACKAGE DIMENSIONS 0.209 (5.31) 0.184 (4.67) LED55CF LED56F 0.030 (0.76) NOM 0.155 (3.94) MAX 1.00 (25.4) M

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PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise bet

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BFS380L6 NPN Silicon RF Transistor Preliminary data
High current capability and low figure for 4 5 6 1 2 3 wide dynamic range application
Low vo

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BFY182 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector

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Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network •

Rating: 1 ★ (5 votes)

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network •

Rating: 1 ★ (5 votes)

www.DataSheet4U.com DATASHEET 14-BIT CONFIGURABLE REGISTERED BUFFER FOR DDR2 CONFIDENTIAL IDT74SSTUBF32869A Description The IDT74SSTUBF32869A is

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IRF6648PbF IRF6648TRPbF RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Optimized for Synchronous Rec

Rating: 1 ★ (5 votes)