Adaptenuators 50Ω, 3,6,10 dB, Features • • .
Infineon
IRLML0060TRPbF - Power MOSFET
VDSS VGS RDS(on) max (@ VGS = 10V) RDS(on) max (@ VGS = 4.5V) 60 ±16 92 116 Applications Load/System Switch V V m m IRLML0060TRPbF HEX.
Infineon
IRL7472L1TRPbF - Power MOSFET
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies.
Infineon
IRLH7134PbF - Power MOSFET
VDSS RDS(on) max (@ VGS = 10V) Qg (typical) ID (@TC (Bottom) = 25°C) 40 3.3 39 50 V m nC A Applications Secondary Side Synchronous Rectific.
BYD
BF960NF06T - N-Channel MOSFET
BYD Microelectronics Co., Ltd. BF960NF06T 60V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimi.
Infineon
IRFR6215PbF - Power MOSFET
IRFR6215PbF IRFU6215PbF P-Channel 175°C Operating Temperature Surface Mount (IRFR6215) Straight Lead (IRFU6215) Advanced Process Technology.
Infineon
IRLB8314PbF - Power MOSFET
IRLB8314PbF Application Optimized for UPS/Inverter Applications Low Voltage Power Tools Benefits Best in Class Performance for UPS/Inverter App.
Infineon Technologies AG
BFR193 - Low Noise Silicon Bipolar RF Transistor
Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB.
Infineon Technologies AG
BFR360 - NPN Silicon RF Transistor
BFR360F NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and.
Infineon Technologies AG
BFR92P - Low Noise Silicon Bipolar RF Transistor
Low Noise Silicon Bipolar RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 mA to 20.
Infineon
PVT322PbF - Power MOSFET
General Description The PVT322 Series Photovoltaic Relay is a dual-pole, normally open solid-state relay that can replace electromechanical relays in .
Infineon
BFP640ESD - Robust Low Noise Silicon Germanium Bipolar RF Transistor
BFP640ESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-17 RF & Protection Devices Edition 2012-09-17 Pub.
Infineon
BFP640FESD - Robust Low Noise Silicon Germanium Bipolar RF Transistor
BFP640FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Pu.
Infineon
BFP720 - Low Noise Silicon Germanium Bipolar RF Transistor
BFP720 Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-10-19 RF & Protection Devices Edition 2012-10-19 Published by .
Infineon
BFP720FESD - Robust Low Noise Silicon Germanium Bipolar RF Transistor
BFP720FESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2012-10-16 RF & Protection Devices Edition 2012-10-16 Pu.
Infineon
IRFP250MPbF - MOSFET
Features Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralle.
BYD
BF960NF06 - N-Channel MOSFET
BYD Microelectronics Co., Ltd. BF960NF06 60V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimiz.
Infineon
BC857BF - PNP Silicon AF Transistor
PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise bet.
