ON Semiconductor
NGD8209N - Ignition IGBT
NGD8209N Ignition IGBT 12 A, 410 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating
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NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPA.
ON Semiconductor
ON Semiconductor
NGD8209N Distributor
