NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPA.
ON Semiconductor
NGD8209N - Ignition IGBT
NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating .
ON Semiconductor
NGD8209NT4G - Ignition IGBT
NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating .
