isc Silicon NPN Power Transistor NJD2873 DESCRIP.
Inchange Semiconductor
NJD2873 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor NJD2873 DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA) ·DC Current.
ON Semiconductor
NJD2873 - Power Transistors
NJD2873, NJVNJD2873 Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. Features.
ON Semiconductor
NJVNJD2873 - Power Transistors
NJD2873, NJVNJD2873 Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. Features.
ON Semiconductor
NJD2873T4 - Power Transistor
www.DataSheet4U.com NJD2873T4 Plastic Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applic.
ON Semiconductor
NJVNJD2873T4G - Power Transistors
NJD2873, NJVNJD2873 Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. Features.
