NJW0281G Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor NJW0281G DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min) ·Good Linearity of hFE ·Comple

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NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJ

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