isc Silicon NPN Power Transistor NJW0281G DESCRI.
Inchange Semiconductor
NJW0281G - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor NJW0281G DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min) ·Good Linearity of hFE ·Comple.
ON Semiconductor
NJW0281G - NPN-PNP Power Bipolar Transistors
NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJ.