NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT.
Nitronex
NPT2010 - GaN HEMT
NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features Suitable for.
MACOM
NPT2010 - GaN on Silicon General Purpose Amplifier
NPT2010 GaN on Silicon General Purpose Amplifier DC - 2.2 GHz, 48 V, 100 W Features GaN on Si HEMT D-Mode Amplifier Suitable for Linear & Saturate.