NTD25 Datasheet | Specifications & PDF Download

NTD25P03LG P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.033 at VGS = - 10 V 0.046 at VGS = - 4.5 V ID (A)d - 26 - 21

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MOSFET – Power, P-Channel, Logic Level, DPAK -25 A, -30 V NTD25P03L Designed for low voltage, high speed switching applications and to withstand high

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MOSFET - Power, N‐Channel, SUPERFET) III, FAST 650 V, 250 mW, 13 A NTD250N65S3H Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high v

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NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI

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