NTE55 Datasheet | Specifications & PDF Download

www.DataSheet4U.com NTE5550 thru NTE5558 Silicon Controlled Rectifiers Description: The NTE5550 thru NTE5558 SCR’s are designed primarily for half–wa

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NTE5511 thru NTE5513 Silicon Controlled Rectifier (SCR) 5 Amp Description: The NTE5511 thru NTE5513 all–diffused, three junction, silicon controlled r

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NTE5567, NTE5568, NTE5569, & NTE5571 Silicon Controlled Rectifier (SCR) for Phase Control Applications Features: D High Current Rating D Excellent Dyn

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www.DataSheet4U.com NTE5580 thru NTE5585 Silicon Controlled Rectifier for Phase Control Applications Features: D Center Fired Gate D All Diffused Des

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NTE5541 thru NTE5548 Silicon Controlled Rectifier (SCR) 35 Amp Description: The NTE5541 thru NTE5548 are silicon controlled rectifiers (SCR) packaged

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NTE5500 thru NTE5509 Silicon Controlled Rectifier (SCR) 16 Amp Description: The NTE5500 thru NTE5509 series of industrial–type silicon controlled rect

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NTE5514 thru NTE5516 Silicon Controlled Rectifier (SCR) Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (TJ = +100°C), VDRM NTE5514 . . .

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NTE5517 thru NTE5519 Silicon Controlled Rectifier (SCR) Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (TJ = +100°C), VDRM NTE5517 . . .

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NTE5550 thru NTE5558 Silicon Controlled Rectifiers Description: The NTE5550 thru NTE5558 SCR’s are designed primarily for half–wave AC control applica

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NTE5567, NTE5568, NTE5569, & NTE5571 Silicon Controlled Rectifier (SCR) for Phase Control Applications Features: D High Current Rating D Excellent Dyn

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NTE5576 & NTE5578 Silicon Controlled Rectifier Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified) Repetitive Peak Voltages, VDRM & VRR

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www.DataSheet4U.com NTE5580 thru NTE5585 Silicon Controlled Rectifier for Phase Control Applications Features: D Center Fired Gate D All Diffused Des

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www.DataSheet4U.com NTE5550 thru NTE5558 Silicon Controlled Rectifiers Description: The NTE5550 thru NTE5558 SCR’s are designed primarily for half–wa

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www.DataSheet4U.com NTE5550 thru NTE5558 Silicon Controlled Rectifiers Description: The NTE5550 thru NTE5558 SCR’s are designed primarily for half–wa

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NTE5514 thru NTE5516 Silicon Controlled Rectifier (SCR) Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (TJ = +100°C), VDRM NTE5514 . . .

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NTE553 Schottky Barrier Diode Description: The NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF switching app

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NTE5520 thru NTE5531 Silicon Controlled Rectifier (SCR), 25A Maximum Ratings and Characteristics: Blocking State (TJ = +125°C unless otherwise specifi

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NTE5539 & NTE5540 Silicon Controlled Rectifier (SCR) 55 Amps Features: D High Voltage Capability D High Surge Capability D Glass Passivated Chip Elect

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NTE5550 thru NTE5558 Silicon Controlled Rectifiers Description: The NTE5550 thru NTE5558 SCR’s are designed primarily for half–wave AC control applica

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NTE5562, NTE5564, NTE5566 Silicon Controlled Rectifiers (SCR’s) Description: The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a T

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