Noise-resistance Datasheet | Specifications & PDF Download

PC812 PC812 s Features 1. High noise reduction ( Common mode rejection voltage V CM : TYP. 1.5kV at dV/dt = 2kV/ µ s, R L = 470 Ω , V np = 100mV ) 2.

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S21MD4V S21MD4V .. s Features 1. Built-in zero-cross circuit 2. High critical rate of rise of OFF-state voltage ( dV/dt : MIN. 100V/ µ s ) 3. High re

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S21MD3V S21MD3V .. s Features 1. High critical rate of rise of OFF-state voltage ( dv/dt : MIN. 500V/µ s ) 2. High repetitive peak OFF-state voltage

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S21MD3V S21MD3V .. s Features 1. High critical rate of rise of OFF-state voltage ( dv/dt : MIN. 500V/µ s ) 2. High repetitive peak OFF-state voltage

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S11MD5T/S21MD3TV/S21MD4TV S11MD5T/S21MD3TV/ S21MD4TV s Features 1. NO.5 pin completely sealed in the mold for external noise resistance 2. Built-in z

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S11MD5T/S21MD3TV/S21MD4TV S11MD5T/S21MD3TV/ S21MD4TV s Features 1. NO.5 pin completely sealed in the mold for external noise resistance 2. Built-in z

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S21MD3V S21MD3V .. s Features 1. High critical rate of rise of OFF-state voltage ( dv/dt : MIN. 500V/µ s ) 2. High repetitive peak OFF-state voltage

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