ON Semiconductor NSI Datasheet | Pinout, Features, Price Comparison & PDF

isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DataSheet4U.com et4U.com DataShee DataShe

PN2222 PN2222 General Purpose Transistor NPN Epitaxial Silicon Transistor 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25

LM3046 Transistor Array July 1999 LM3046 Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on

LM3045 LM3046 LM3086 Transistor Arrays December 1994 LM3045 LM3046 LM3086 Transistor Arrays General Description The LM3045 LM3046 and LM3086 each co

LM3045 LM3046 LM3086 Transistor Arrays December 1994 LM3045 LM3046 LM3086 Transistor Arrays General Description The LM3045 LM3046 and LM3086 each co

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output App

Complementary NPN‐PNP Power Bipolar Transistors NJW0281G (NPN), NJW0302G (PNP) These complementary devices are lower power versions of the popular NJ

FJP13007 — High Voltage Fast-Switching NPN Power Transistor November 2014 FJP13007 High Voltage Fast-Switching NPN Power Transistor Features • High

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2347 TV UHF Oscillator Applications TV VHF Mixer Applications 2SC2347 Unit: mm Maximum Ratin

BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices MAXIMUM RATINGS Rating Collector − Emitter Voltage

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC6017 DESCRIPTION ·Large current capacitance ·High-speed switching ·100% avalanche tested

IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS F

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF1404，IIRF1404 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.0mΩ ·Enhancement mo

PN2221 PN2221A PN2222 PN2222A SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR PN2221, PN2222 seri

www.DataSheet.co.kr Inchange Semiconductor Silicon NPN Power Transistors Product Specification 2SC1061 DESCRIPTION With TO-220 package Low saturatio

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3205， IIRF3205 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.0mΩ ·Enhancement m