OR-1015 Datasheet | Specifications & PDF Download

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applica

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PA1015 PNP general purpose transistor Product specification Supersedes data of 1997 May 01

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UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  FEATURES * Collector-Emitter Voltage: BVCEO

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2SC1015 PNP Transistors Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Low niose: NF=1dB(Typ.) at f=1KHz 3 2 1.Base 2.Emitte

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors A1015 TRANSISTOR (PNP) TO—92 1.EMITTER FEATURES Power dis

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DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SA1015 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use

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2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applica

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KSA1015 — PNP Epitaxial Silicon Transistor September 2015 KSA1015 PNP Epitaxial Silicon Transistor Features • Low-Frequency Amplifier • Collector-B

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TIGER ELECTRONIC CO.,LTD 2SA1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The 2SA1015 is designed for use in driver stage of AF amplifier and gen

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A 2SB1015A Audio Frequency Power Amplifier Applications · Low collector saturation volta

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2SC1015 PNP Transistors Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Low niose: NF=1dB(Typ.) at f=1KHz 3 2 1.Base 2.Emitte

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2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applica

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Silicon Epitaxial Planar Transistor FEATURES z Complementary To 2SC1815. z Excellent HFE Linearity. Pb Lead-free z High voltage and high current.

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AOZ1015 EZBuck™ 1.5A Synchronous Buck Regulator www.DataSheet4U.com General Description The AOZ1015 is a high efficiency, simple to use, 1.5A buck reg

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PNP Epitaxial Silicon Transistor KSA1015 Features • Low−Frequency Amplifier • Collector−Base Voltage: VCBO = −50 V • Complement to KSC1815 • These De

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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A1015 Plastic-Encapsulate Transistors(PNP) General description SOT-23 Plastic-Encapsulate Transistors(PNP) FEATURES • Complementary to C1815 • Power

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A1015 PNP Epitaxial Silicon Transistor LOW FREQUENCY AMPLIFIER Collection Dissipation : PC(max) = 400mW Collector-Emitter Voltage : VCEO = -50V Abs

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR10150CT FEATURES ·Metal silicon junction，majority carrier conduction ·Low Power Loss/High Effic

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