P06A Datasheet | Specifications & PDF Download

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PNP PNP LOW Vce(sat) TRANSISTOR R BM05P06A MAIN CHARACTERISTICS Package IC VCEO PC（a）(SOT-89) PC（b）(SOT-223) -5A -60V 1.5W 3W     A

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐60V RDSON (MAX.) 41mΩ ID ‐26A G UIS, Rg 100% Tested

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PPJU14P06A / PJD14P06A 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -14 A Features  RDS(ON), VGS@-10V,ID@-6A<110mΩ  RDS(ON), VG

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Thyristor Surge Suppressors P0080TA Thru P3500TA Description Package: DO-214AC / SMA Pxxx0TA Series are micro capacitance Thyristor Surge Suppress

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐60V RDSON (MAX.) 62mΩ ID ‐17A G UIS, Rg 100% Tested

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐60V RDSON (MAX.) 90.8mΩ ID ‐10A G UIS, Rg 100% Test

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PPJW4P06A 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -4.0 A SOT-223 Features  RDS(ON), VGS@-10V,ID@-4.0A<110mΩ  RDS(ON), VGS

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PPJU14P06A / PJD14P06A 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -14 A Features  RDS(ON), VGS@-10V,ID@-6A<110mΩ  RDS(ON), VG

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CYStech Electronics Corp. Spec. No. : C924V8 Issued Date : 2015.10.26 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB032P0

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PPJD14P06A-AU 60V P-Channel Enhancement Mode MOSFET Voltage -60 V Current -14 A Features  RDS(ON), VGS@-10V, ID@-6A<110mΩ  RDS(ON), VGS@-4.5V,

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o §upertexinc. TP06A P-Channel Enhancement-Mode Vertical CMOS Power FETs Ordering Information BVoss I ROS(ON) BVOGS (max) -60V 3.50 IO(ON) (min)

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