EMB40P06A Datasheet (192.68 KB)
EMB40P06A
Excelliance MOS
192.68 KB
Mosfet.
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐60V
RDSON (MAX.)
62mΩ
ID
‐17A
G
UIS, Rg 100% Tested.
📁 Related Datasheet
EMB40A03K - MOSFET
(Excelliance MOS)
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D1
D2
RDSON (MAX.) ID
40mΩ 4.5A
G1
G2
S1
S2
.
EMB40A06S - MOSFET
(Excelliance MOS)
EMB40A06S
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
RDSON (MAX.)
40mΩ
ID
6A
UIS, 100% Te.
EMB4 - Dual Digital Transistors
(Rohm)
EMB4 / UMB4N
General purpose (dual digital transistor)
Datasheet
Parameter VCEO IC R1
DTr1 and DTr2 -50V
-100mA 10kΩ
lFeatures 1)Two DTA114T c.
EMB4 - Dual Digital Transistors
(JCET)
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
EMB4 Dual Digital Transistors (PNP+PNP)
SOT-563
F.
EMB4 - General purpose transistors
(Jin Yu Semiconductor)
General purpose transistors (dual digital transistors)
EMB4
FEATURES z Two DTA114T chips in a package
Marking: B4 Equivalent circuit
(3) (2) (1)
R.
EMB44P04A - P-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
-40V
RDSON (MAX.)
44mΩ
ID
-25A
P Channel MOSFET
UIS, Rg.
EMB44P04Q - P-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
‐40V
RDSON (MAX.)
44mΩ
ID
‐6A
G
UIS, Rg 100% Tested
.
EMB45A06G - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMB45A06G
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
RDSON (MAX.)
45mΩ
ID
6A
UIS, Rg 100%.
