Datasheet4U Logo Datasheet4U.com

EMB40P06A Datasheet - Excelliance MOS

EMB40P06A MOSFET

P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐60V RDSON (MAX.) 62mΩ ID ‐17A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=‐12A, RG=25Ω L = 0.05mH Power Dissipa.

EMB40P06A-ExcellianceMOS.pdf

Preview of EMB40P06A PDF
EMB40P06A Datasheet Preview Page 2 EMB40P06A Datasheet Preview Page 3

Datasheet Details

Part number:

EMB40P06A

Manufacturer:

Excelliance MOS

File Size:

192.68 KB

Description:

Mosfet.

📁 Related Datasheet

EMB40A03K MOSFET (Excelliance MOS)

EMB40A06S MOSFET (Excelliance MOS)

EMB4 Dual Digital Transistors (Rohm)

EMB4 Dual Digital Transistors (JCET)

EMB4 General purpose transistors (Jin Yu Semiconductor)

EMB44P04A P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB44P04Q P-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMB45A06G Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

TAGS

EMB40P06A EMB40P06A MOSFET Excelliance MOS

EMB40P06A Distributor