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EMB45A06G Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Description

EMB45A06G Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 45mΩ ID 6A UIS, Rg 100%.

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Datasheet Specifications

Part number
EMB45A06G
Manufacturer
Excelliance MOS
File Size
188.61 KB
Datasheet
EMB45A06G-ExcellianceMOS.pdf
Description
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB45A06G Distributors

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Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS
Excelliance MOS EMB45A06G-like datasheet