EMB45A06G Datasheet (Excelliance MOS) - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB45A06G, Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB45A06G Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 45mΩ ID 6A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C 6 ID TA = 100 °C 4.5 IDM 24 Avalanche Current IAS 15 Avalanche Energy L = 0.1mH, ID=12A, RG=25Ω EA