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EMB45A06G Datasheet - Excelliance MOS

EMB45A06G Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMB45A06G Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 45mΩ ID 6A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C 6 ID TA = 100 °C 4.5 IDM 24 Avalanche Current IAS 15 Avalanche Energy L = 0.1mH, ID=12A, RG=25Ω EA.

EMB45A06G-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMB45A06G

Manufacturer:

Excelliance MOS

File Size:

188.61 KB

Description:

Dual n-channel logic level enhancement mode field effect transistor.

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EMB45A06G EMB45A06G Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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