EMB45A06G Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

Excelliance MOS

Description

EMB45A06G Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 45mΩ ID 6A UIS, Rg 100%.

Datasheet Specifications

Part number: EMB45A06G
Manufacturer: Excelliance MOS
File Size: 188.61 KB
Datasheet: EMB45A06G-ExcellianceMOS.pdf
Description: Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

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