Part number:
EMB4
Manufacturer:
File Size:
0.96 MB
Description:
Dual digital transistors.
* 1)Two DTA114T chips in a EMT or UMT package. 2)Mounting possible with EMT3 or UMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. lOutline SOT-563 SOT-363 EMB4 UMB4N (EMT6) (UMT6)
EMB4
0.96 MB
Dual digital transistors.
📁 Related Datasheet
EMB02K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V
RDSON (MAX.) 5.5mΩ
30V 2..
EMB02N03HR - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
1.7mΩ
ID
100A
G
UIS, Rg 100% Tested.
EMB02N03HS - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
2.5mΩ
ID
100A
G
UIS, Rg 100% Tested.
EMB02N60AB - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
4.0Ω
ID
2A
G
UIS, 100% Tested
S
.
EMB02N60CSB - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
600V
D
RDSON (MAX.)
4.0Ω
ID
2A
G
UIS, 100% Tested
S
.
EMB02Q03HP - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V
30V
RDSON (MAX.) 5.0mΩ 2.0mΩ
ID
53A
.
EMB03K03HP - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
(Preliminary)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V
RDSON (MAX.).
EMB03N03A - MOSFET
(Excelliance MOS)
EMB03N03A
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
3.5mΩ
ID
80A
G
UIS, Rg 1.