EMB40A06S Datasheet (Excelliance MOS)

EMB40A06S, MOSFET

EMB40A06S Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 60V RDSON (MAX.) 40mΩ ID 6A UIS, 100% Tested Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate‐Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C 6 ID TC = 100 °C 4.3 IDM 24 Avalanche Current IAS 12 Avalanche Energy L = 0.1mH, ID=12A, RG=25Ω EAS