P264 Datasheet | Specifications & PDF Download

TOP264-271 TOPSwitch™-JX Family Integrated Off-Line Switcher with EcoSmart™ Technology for Highly Efficient Power Supplies Product Highlights EcoSmart

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si

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www.DataSheet4U.com Standard Power MOSFET IRFP 264 VDSS = 250 V ID (cont) = 38 A RDS(on) = 0.075 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VG

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www.vishay.com IRFP264 Vishay Siliconix Power MOSFET D TO-247AC G S D G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (max.) (nC)

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Digital Absolute Pressure Sensor KP264 dBAP Digital Barometric Air Pressure Sensor IC Data Sheet Revision 1.0, 2019-06-07 Sense & Control KP264 Digit

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UNISONIC TECHNOLOGIES CO., LTD UFP264 38A, 250V N-CHANNEL POWER MOSFET  DESCRIPTION Power MOSFET The UTC UFP264 is an N-c hannel power MOSFET using

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TOP264-271 TOPSwitch™-JX Family Integrated Off-Line Switcher with EcoSmart™ Technology for Highly Efficient Power Supplies Product Highlights EcoSmart

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XP264N0301TR-G N-channel MOSFET 60V, 0.3A ETR11049-001 ■FEATURES On-State Resistance Driving voltage Environmentally Friendly : RDS(on)＝1.6Ω@VGS =1

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Preliminary EUP2644 TFT LCD DC-DC Converter with Integrated LDO, OP-AMP and GPM Switch DESCRIPTION The EUP2644 generates power supply rails for thin

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DATA SHEET www.onsemi.com PIN Diode Dual series PIN Diode for VHF, UHF and AGC NSVP264SDSF3 This PIN diode is designed to realize compact and effici

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TP2640 P-Channel Enhancement-Mode Vertical DMOS FET Features • –2V Maximum Low Threshold • High Input Impedance • Low Input Capacitance • Fast Switc

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PD - 94811 IRFP264NPbF HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanc

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EP26 Series • EPO™ Programmable Oscillators • 3.3V supply voltage • HCMOS output • Ceramic surface mount package • Stability to 50ppm • Available on t

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IRFP264, SiHFP264 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 35

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IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 3

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-

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Supertex inc. TP2640 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold (-2.0V max.) ►► High input imped

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