SiHFP264N Power MOSFET

Vishay Siliconix

Description

IRFP264N, SiHFP264N Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 3.
Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number: SiHFP264N
Manufacturer: Vishay ↗ Siliconix
File Size: 175.25 KB
Datasheet: SiHFP264N_VishaySiliconix.pdf
Description: Power MOSFET

Features

* 250 0.060 www. DataSheet4U. com
* Advanced Process Technology Dynamic dV/dt Rating 175 °C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available

Applications

* The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lea

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SiHFP264N Power MOSFET Vishay Siliconix

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