P5506BDA Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤55mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for

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NIKO-SEM N-Channel Enhancement Mode P5506BDA Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 55

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