P6N80 Datasheet | Specifications & PDF Download

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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FQP6N80C / FQPF6N80C — N-Channel QFET® MOSFET December 2013 FQP6N80C / FQPF6N80C N-Channel QFET® MOSFET 800 V, 5.5 A, 2.5 Ω Description Features Th

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PFP6N80 / PFF6N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkabl

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SSFP6N80 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ G

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FQP6N80 September 2000 QFET FQP6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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STP6N80K5 Datasheet N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh K5 Power MOSFET in a TO-220 package Features TAB TO-220 1 23 D(2, TAB) Order code

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DTP6N80/DTP6N80F www.din-tek.jp N-Channel 800V (D-S) Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration

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DTP6N80/DTP6N80F www.din-tek.jp N-Channel 800V (D-S) Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration

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FQP6N80 September 2000 QFET FQP6N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP6N80K5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤1.6Ω ·Enhancement mode ·Fast

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