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STP6N80K5 - N-Channel MOSFET

STP6N80K5 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP6N80K5 *.

STP6N80K5 Features

* Static drain-source on-resistance: RDS(on) ≤1.6Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Be suitable for synchronous rectification for server and gene

STP6N80K5 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 4.5 IDM Drain Current-Single Pulsed 18 PD Total Dissipation @TC=25℃ 85 Tj Max. Operating Junction Temperature 150 Tstg Storage Te

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Datasheet Details

Part number
STP6N80K5
Manufacturer
INCHANGE
File Size
223.69 KB
Datasheet
STP6N80K5-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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