STP6N120K3 Datasheet - STMicroelectronics

STP6N120K3 N-channel MOSFET

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitabl.

STP6N120K3 Features

* Order codes VDSS RDS(on) max ID Ptot STFW6N120K3 1200 V < 2.4 Ω 6 A 63 W STP6N120K3 1200 V < 2.4 Ω 6 A 150 W STW6N120K3 1200 V < 2.4 Ω 6 A 150 W

* 100% avalanche tested

* Extremely large avalanche performance

* Gate charge minimized

* Very low intrinsic capacitances

* Zene

STP6N120K3-STMicroelectronics.pdf