STP6N60M2 Datasheet (STMicroelectronics)

STP6N60M2, N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

They are therefor

STP6N60M2 Features

* Order codes STF6N60M2 STP6N60M2 STU6N60M2 VDS @ TJmax RDS(on) max ID 650 V 1.2 Ω 4.5 A

* Extremely low gate charge

* Lower RDS(on) x area vs previous generation

* Low gate input resistance

* 100% avalanche tested

* Zener-protected Applications