STP6NA60FP

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

ST Microelectronics

STP6NA60FP General Description

This series of POWER MOSFETS represents the most advanced high voltage technology. The optmized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HI.

STP6NA60FP Datasheet (50.53 KB)

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STP6NA60FP

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STMicroelectronics ↗

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50.53 KB

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N - channel enhancement mode fast power mos transistor.
STP6NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP6NA60F P s s s s s s s V DSS 600 V R DS(on) < 1.2 Ω ID 3.

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STP6NA60FP CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ST Microelectronics

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STP6NA60FP General Description

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