PA04 Datasheet | Specifications & PDF Download

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor

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Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge

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PA04 • PA04A Power Operational Amplifier RoHS COMPLIANT FEATURES • High Internal Dissipation — 200 Watts • High Voltage, High Current — 200V, 20A •

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSª3 Power-Transistor, 40 V IPA041N04N G Data Sheet Rev. 2.0 Final Power Manag

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TC7PA04FU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7PA04FU Inverter with 3.6 V Tolerant Input and Output Features • Low voltage

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPA040N06N Data Sheet Rev. 2.1 Final Power Managem

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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 Product Introduction Token Power Inductor Enhances Low-Profile High-Current With Up To 1MHz High Frequency. Features :  Good magnetic shielding. 

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IPA045N10N3 G MOSFET OptiMOSTM3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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DATA SHEET METAL LOW OHMIC JUMPER PA series sizes 0201/ 0402/ 0603/ 0805 RoHS compliant & Halogen free Product specification – October 05, 2018 V.0

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PA040XS3 The information contained herein is the exclusive property of Prime View International Co., Ltd. and shall not be distributed, reproduced, or

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PA04 • PA04A Power Operational Amplifier RoHS COMPLIANT FEATURES • High Internal Dissipation — 200 Watts • High Voltage, High Current — 200V, 20A •

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a

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isc N-Channel MOSFET Transistor IPA045N10N3,IIPA045N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 4.5mΩ (max) ·Enhancement mode ·Fast Swi

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P-511-232(V:4) PA040XS1 Version : 4.0 TECHNICAL SPECIFICATION MODEL NO. : PA040XS1 The content of this information is subject to be changed with

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IPA045N10N3 G MOSFET OptiMOSTM3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source O

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