PDC-10-1 Datasheet | Specifications & PDF Download

30V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

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100V Dual N-Channel MOSFETs PDC0810T General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS techn

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SPDC12L00010 www.datasheet4u.com 10 A DC/DC converter module Preliminary Data Features ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ MTBF 1 000 000 (TA = 25 °C)

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SPDCPOE03 www.datasheet4u.com Power over ethernet 10 W module Preliminary data Features ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Input voltage ran

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30V Dual N-Channel MOSFETs PDC3810V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS techno

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MAPDCT0027 2 Way 0º Power Divider 5-1000MHz Features • • • • • • SMT unit 2 Way 0 degree 260°C Reflow Compatible RoHS* Compliant RoHS version of MACPE

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Plug-In Directional Coupler PDC-10-1+ 50Ω 0.5 to 500 MHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100

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3 34 5 6 $ 5 %0 ' 7 $ 7 % '0 7 08 6 9 5 + 3 $ *1 6 0'': $ 6 9 + ; < = *)'> ? ? 93@ 2 A31* '''.

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100V Dual N-Channel MOSFETs PDC0810V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS techn

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SPDCPOE12 www.datasheet4u.com Power over ethernet 10 W module Preliminary data Features ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Input voltage ran

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30V N-Channel MOSFETs PDC3810H General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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MAPDCT0010 2 Way 0º Reverse Path Power Divider 5 to 100 MHz Features • • • • • Surface mount 2 Way 0 degree. 260°C reflow compatible RoHS* compliant A

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