PDC3810V

Dual N-Channel MOSFET

Potens semiconductor

PDC3810V Features

* 30V,35A, RDS(ON) =13mΩ @VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID

PDC3810V General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDC3810V Datasheet (682.07 KB)

PDC3810V Datasheet Preview — Preview of PDC3810V PDF

Datasheet Details

Part number:

PDC3810V

Manufacturer:

Potens semiconductor

File Size:

682.07 KB

Description:

Dual n-channel mosfet.

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PDC3810V Dual N-Channel MOSFET Potens semiconductor

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PDC3810V Features

PDC3810V General Description

Datasheet Details

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