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PDC3810V - Dual N-Channel MOSFET

PDC3810V Description

30V Dual N-Channel MOSFETs PDC3810V General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDC3810V Features

* 30V,35A, RDS(ON) =13mΩ @VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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Datasheet Details

Part number
PDC3810V
Manufacturer
Potens semiconductor
File Size
682.07 KB
Datasheet
PDC3810V-Potenssemiconductor.pdf
Description
Dual N-Channel MOSFET

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Dual N-Channel MOSFET Potens semiconductor
Potens semiconductor PDC3810V-like datasheet

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