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PDC3806T - Dual N-Channel MOSFETs

PDC3806T Description

30V Dual N-Channel MOSFETs PDC3806T General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDC3806T Features

* 30V,40A, RDS(ON) =6.5mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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Datasheet Details

Part number
PDC3806T
Manufacturer
Potens semiconductor
File Size
478.60 KB
Datasheet
PDC3806T-Potenssemiconductor.pdf
Description
Dual N-Channel MOSFETs

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