PDC3806T Datasheet - Potens semiconductor

PDC3806T Dual N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDC3806T Features

* 30V,40A, RDS(ON) =6.5mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR

* USB Type C Absolute Maximum Ratings Tc=25℃ unless otherwise noted

PDC3806T-Potenssemiconductor.pdf

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Datasheet Details

Part number:

PDC3806T

Manufacturer:

Potens semiconductor

File Size:

478.60 KB

Description:

Dual n-channel mosfets.

PDC3806T Distributor

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PDC3806T PDC3806T Dual N-Channel MOSFETs Potens semiconductor