PDC3801R - N-Channel MOSFETs
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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PDC3801R Features
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available D2 Applications
* MB / VGA / Vcore
* POL Buck Applications
* SMPS 2nd SR S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG TJ Para
