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PDC3808V - N-Channel MOSFET

PDC3808V Description

30V N-Channel MOSFETs PDC3808V General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDC3808V Features

* 30V,42A, RDS(ON) =10.5mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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Datasheet Details

Part number
PDC3808V
Manufacturer
Potens semiconductor
File Size
581.21 KB
Datasheet
PDC3808V-Potenssemiconductor.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Potens semiconductor
Potens semiconductor PDC3808V-like datasheet