PDC3808V Datasheet - Potens semiconductor

PDC3808V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDC3808V Features

* 30V,42A, RDS(ON) =10.5mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID

PDC3808V-Potenssemiconductor.pdf

PDC3808V Datasheet Preview — Preview of PDC3808V PDF

Datasheet Details

Part number:

PDC3808V

Manufacturer:

Potens semiconductor

File Size:

581.21 KB

Description:

N-channel mosfet.

PDC3808V Distributor

📁 Related Datasheet

PDC3801R N-Channel MOSFETs (Potens semiconductor)

PDC3803R N-Channel MOSFETs (Potens semiconductor)

PDC3806T Dual N-Channel MOSFETs (Potens semiconductor)

PDC3810H N-Channel MOSFETs (Potens semiconductor)

PDC3810V Dual N-Channel MOSFET (Potens semiconductor)

PDC3812V N-Channel MOSFET (Potens semiconductor)

PDC3094X N-Channel MOSFET (Potens semiconductor)

PDC30N15X N-Channel MOSFETs (Potens semiconductor)

TAGS

PDC3808V PDC3808V N-Channel MOSFET Potens semiconductor