PDC3808V - N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
PDC3808V Features
* 30V,42A, RDS(ON) =10.5mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green Device Available Applications
* MB / VGA / Vcore
* POL Applications
* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID
