POT Datasheet | Specifications & PDF Download

Features n Carbon element n Ganging up to 8 sections available n Knurled, flatted and plain shaft styles n Audio taper option n Tracking error within

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30V N-Channel MOSFETs PDC3964X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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Clock Oscillators Surface Mount Type KC3225A-C2 Series (K25-2C Series) CMOS/ 2.5V/ 3.2× 2.5mm Features • Miniature ceramic package • Highly reliable

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PVG3.pdf 08/19 Trimmer Potentiometers SMD Sealed Type Single-Turn PVG3 Series Features 1. Surface Mount 3 mm Square / Single-turn / Cermet / Sealed

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www.DataSheet4U.com Isolated, Potentiometer Input 5B36 FEATURES Amplifies, Protects, Filters, and Isolates a wide variety of three-wire potentiometer

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VCXO-7050/7050L Miniature VCXO Geared to Broadband sFeatures ¡“Small Size” as small as 0.063cc. (5×7×1.8mm) ¡Using 1 chip HCMOS IC. ¡3-state devices a

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60V N-Channel MOSFETs PDC6904X General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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LD8116C 05/05/2018 Flexible Dimming Solution by PWM / 0-10V / Potentiometer REV. 00 General Description The LD8116C contains a processor which can co

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HC-49/U-S Miniature Quartz Crystal Unit for Microprocessor Model HC-49/U-S sFeatures ¡Height 3.5mm, the volume is compact at about one-fourth that of

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FXO-34F Miniature Clock Crystal Oscillator sFeatures ¡This crystal oscillator has a built-in high-precision C-MOS IC suitable for a wide range of temp

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Advanced Information CAT511 8-Bit Digital POT with Independent Reference Inputs FEATURES s Output settings retained without power s Output range incl

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40V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan

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Electrical Characteristics Standard Resistance Range 10 ohms to 2 megohms (see standard resistance table) Resistance To

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60V N-Channel MOSFETs PDF6904 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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1000V N-Channel MOSFETs PMP04N100T General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS techn

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800V N-Channel MOSFETs PMP08N80 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technolo

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650V N-Channel MOSFETs PMP08N65M General Description These N-Channel enhancement mode power field effect transistors are using advanced super juncti

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650V N-Channel MOSFETs PMP10N65M General Description These N-Channel enhancement mode power field effect transistors are using advanced super juncti

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600V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using advanced super junction technolog

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600V N-Channel MOSFETs PMP09N60M General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technol

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