PP6-12-12 Datasheet | Specifications & PDF Download

CAT.NO.D-1001 P.1/5
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IPP60R125CP CoolMOSTM Power Transistor Features • Lowest figure-of-merit R ONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current ca

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isc N-Channel MOSFET Transistor IPP60R125CP，IIPP60R125CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.125Ω ·Enhancement mode ·Fast Switc

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isc N-Channel MOSFET Transistor IPP60R125C6，IIPP60R125C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.125Ω ·Enhancement mode ·Fast Switc

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AC/DC Medical Power Supply TPP 65E-D Series, 65 Watt • Compact encapsulated 65 Watt PCB module (3.2 x2.2 ) • I/O isolation 4000 VAC rated for 250 V

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.3 Final Powe

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R125P6 Data Sheet Rev. 2.0 Final Power Man

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AC/DC Medical Power Supply TPP 65E-J Series, 65 Watt • Compact encapsulated 65 Watt Chassis mount module (4.3 x2.2 ) • I/O isolation 4000 VAC rated

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isc N-Channel MOSFET Transistor IPP60R120C7，IIPP60R120C7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.12Ω ·Enhancement mode ·Fast Switch

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AC/DC Medical Power Supply TPP 65E-J Series, 65 Watt • Compact encapsulated 65 Watt Chassis mount module (4.3 x2.2 ) • I/O isolation 4000 VAC rated

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TPB65R120M,TPP65R120M,TPR65R120M,TPW65R120M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction P

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TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 PP600D120 POW-R-PAK 600A / 1200V TM Half Bridge IGBT A

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AC/DC Medical Power Supply TPP 65E-D Series, 65 Watt • Compact encapsulated 65 Watt PCB module (3.2 x2.2 ) • I/O isolation 4000 VAC rated for 250 V

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 600V CoolMOS™ C7 Power Transistor IPP60R120C7 Data Sheet Rev. 2.0 Final Power Man

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POW-R-PAK: Flexible, Integrated IGBT Power Structures The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a converte

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isc N-Channel MOSFET Transistor IPP60R125P6，IIPP60R125P6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.125Ω ·Enhancement mode ·Fast Switc

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 650V CoolMOS™ C7 Power Transistor IPP65R125C7 Data Sheet Rev. 2.0 Final Power Man

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