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IPP60R125C6

N-Channel MOSFET

IPP60R125C6 Features

* Static drain-source on-resistance: RDS(on) ≤0.125Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Provide all benefits of a fast switching super junction MO

IPP60R125C6 General Description


*Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous IDM Drain Current-Single Pulsed PD Total Dissipation @T.

IPP60R125C6 Datasheet (270.87 KB)

Preview of IPP60R125C6 PDF

Datasheet Details

Part number:

IPP60R125C6

Manufacturer:

INCHANGE

File Size:

270.87 KB

Description:

N-channel mosfet.

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IPP60R125C6 N-Channel MOSFET INCHANGE

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