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PPM6N20V10 - P-Channel MOSFET
Description The enhancement mode MOS is extremely high density cell and low on-resistance. PPM6N20V10 P-Channel MOSFET VDS(V) -20 MOSFET Product Su.PPM6N20V10 - P-Channel MOSFET
WͲŚĂŶŶĞůůŽǁŽŶͲƌĞƐŝƐƚĂŶĐĞDK^& d PRIMARY CHARACTERISTICS VDS(V) RDS(on)(mΩ) ID(A) -20 14@VGS=-4.5V -10 FEATURES The enhancement mode MOS is.