PT2010 Datasheet | Specifications & PDF Download

NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for

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NPT2010 GaN on Silicon General Purpose Amplifier DC - 2.2 GHz, 48 V, 100 W Features  GaN on Si HEMT D-Mode Amplifier  Suitable for Linear & Saturate

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DATA SHEET CURRENT SENSOR - LOW TCR PT series 5%, 2%, 1% sizes 0402/0603/0805/1206/0815/2010/2512 RoHS compliant & Halogen free Product specificatio

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PFC Device Corporation PT20100E PT20100D 20A 100V HPTR® Schottky Rectifier Major ratings and characteristics Characteristics IF(AV) Rectangular Wa

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PFC Device Corporation PT20100E PT20100D 20A 100V HPTR® Schottky Rectifier Major ratings and characteristics Characteristics IF(AV) Rectangular Wa

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