NPT2010 Datasheet - Nitronex

NPT2010, GaN HEMT

NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology .
The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.

datasheet Preview Page 1 from Datasheet4u.com

NPT2010-Nitronex.pdf

NPT2010 Datasheet Preview — Preview of NPT2010 PDF

Datasheet Details

Part number:

NPT2010

Manufacturer:

Nitronex

File Size:

2.35 MB

Description:

GaN HEMT

Applications

* Tunable from DC-2.2 GHz
* 48V Operation
* Industry Standard Package
* High Drain Efficiency (>60%) Applications
* Defense Communications
* Land Mobile Radio
* Avionics
* Wireless Infrastructure
* ISM Applications
* VHF/UHF/L-Band Radar DC-2.2 GHz 100W GaN

NPT2010 Distributors

📁 Related Datasheet

NPT2020 NPT2020-SMB2 NPT2021 NPT2022 NPT25 NPT25100

📌 All Tags

NPT2010 GaN HEMT Nitronex

Nitronex NPT2010-like datasheet

NPT2018

NPT2019