Part number:
NPT2010
Manufacturer:
Nitronex
File Size:
2.35 MB
Description:
Gan hemt.
Datasheet Details
The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation.
This device has been designed for CW, pulsed, and linear operation with output power levels to 100W (50 dBm) in an industry standard metal-ceramic package with a bolt down flange.
RF Specifications (CW, 2.15 GHz): VDS
NPT2010 Features
* Suitable for linear and saturated applications
* Tunable from DC-2.2 GHz
* 48V Operation
* Industry Standard Package
* High Drain Efficiency (>60%) Applications
* Defense Communications
* Land Mobile Radio
* Avionics
* Wireless Infrastructure
* ISM Applicat
Datasheet Details
NPT2010
Nitronex
2.35 MB
Gan hemt.
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