NPT2010 Datasheet - Nitronex

NPT2010 GaN HEMT

The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 100W (50 dBm) in an industry standard metal-ceramic package with a bolt down flange. RF Specifications (CW, 2.15 GHz): VDS.

NPT2010 Features

* Suitable for linear and saturated applications

* Tunable from DC-2.2 GHz

* 48V Operation

* Industry Standard Package

* High Drain Efficiency (>60%) Applications

* Defense Communications

* Land Mobile Radio

* Avionics

* Wireless Infrastructure

* ISM Applicat

NPT2010-Nitronex.pdf

NPT2010 Datasheet Preview — Preview of NPT2010 PDF

Datasheet Details

Part number:

NPT2010

Manufacturer:

Nitronex

File Size:

2.35 MB

Description:

Gan hemt.

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NPT2010 NPT2010 GaN HEMT Nitronex

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