NPT2010

GaN HEMT

NPT2010 Features

* Suitable for linear and saturated applications

* Tunable from DC-2.2 GHz

* 48V Operation

* Industry Standard Package

* High Drain Efficiency (>60%) Applications

* Defense Communications

* Land Mobile Radio

* Avionics

* Wireless Infrastructure

* ISM Applicat

NPT2010 General Description

The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This device has been designed for CW, pulsed, and linear operation with output power levels to 100W (50 dBm) in an industry standard metal-ceramic package with a bolt down flange. RF Specifications (CW, 2.15 GHz): VDS.

NPT2010 Datasheet (2.35 MB)

NPT2010 Datasheet Preview — Preview of NPT2010 PDF

Datasheet Details

Part number:

NPT2010

Manufacturer:

Nitronex

File Size:

2.35 MB

Description:

Gan hemt.

📁 Related Datasheet

NPT2010 GaN on Silicon General Purpose Amplifier (MACOM)

NPT2018 GaN HEMT (Nitronex)

NPT2019 GaN HEMT (Nitronex)

NPT2020 GaN Wideband Transistor (MA-COM)

NPT2020-SMB2 GaN Wideband Transistor (MA-COM)

NPT2021 GaN Wideband Transistor (MA-COM)

NPT2022 HEMT D-Mode Amplifier (MA-COM)

NPT25 Press Fit Triac (Naina Semiconductor)

NPT25100 28V GaN Power Amplifier (MACOM)

NPT25100B 28V GaN Power Amplifier (MACOM)

TAGS

NPT2010 GaN HEMT Nitronex

Image Gallery

NPT2010 Features

NPT2010 General Description

Datasheet Details

File Size:

Description:

NPT2010 Distributor