NPT2010 GaN HEMT

Description

NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology .
The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.

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NPT2010 Datasheet Preview — Preview of NPT2010 PDF

Datasheet Specifications

Part number: NPT2010
Manufacturer: Nitronex
File Size: 2.35 MB
Datasheet: NPT2010-Nitronex.pdf
Description: GaN HEMT

Applications

* Tunable from DC-2.2 GHz
* 48V Operation
* Industry Standard Package
* High Drain Efficiency (>60%) Applications
* Defense Communications
* Land Mobile Radio
* Avionics
* Wireless Infrastructure
* ISM Applications
* VHF/UHF/L-Band Radar DC-2.2 GHz 100W GaN

NPT2010 Distributors

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NPT2010 GaN HEMT Nitronex

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